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The early 2000s STS Multiplex ICP Deep Reactive Ion Etch System (DRIE) is a highly specialized system used for deep silicon etching using the Bosch process. The STS ASE ICP DRIE is a load locked, inductively coupled plasma etch system that uses sulfur hexaflouride (SF6), octafluorocyclobutane (C4F8), oxygen (O2), and argon (Ar) process gases.
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